Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

مطالعه کاربردهای آزولا study on applications of azolla

چکیده ندارد.

GaN transistors on Si for switching and high-frequency applications

Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

a study on thermodynamic models for simulation of 1,3 butadiene purification columns

attempts have been made to study the thermodynamic behavior of 1,3 butadiene purification columns with the aim of retrofitting those columns to more energy efficient separation schemes. 1,3 butadiene is purified in two columns in series through being separated from methyl acetylene and 1,2 butadiene in the first and second column respectively. comparisons have been made among different therm...

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and s...